Terahertz [本・雑誌・コミック]

Terahertz 電子書籍
Terahertz and
Terahertz Advanced

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65件中 61件 - 65件 1 2 3

商品	説明	価格
Emerging Trends in Terahertz Solid-State Physics and Devices Sources, Detectors, Advanced Materials, and Light-matter Interactions【電子書籍】楽天Kobo電子書籍ストア	＜p＞This book highlights recent advances and applications in terahertz (THz) technology, addressing advanced topics such as THz biomedical imaging, pattern recognition and tomographic reconstruction for THz biomedical imaging by machine learning and artificial intelligence, THz imaging radars for autonomous vehicle applications, and THz imaging systems for security and surveillance. It also discusses theoretical, experimental, established and validated empirical work on these topics.＜/p＞画面が切り替わりますので、しばらくお待ち下さい。 ※ご購入は、楽天kobo商品ページからお願いします。※切り替わらない場合は、こちらをクリックして下さい。 ※このページからは注文できません。	18,231円
Field-effect Self-mixing Terahertz Detectors【電子書籍】[ Jiandong Sun ] 楽天Kobo電子書籍ストア	＜p＞A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques anddevice simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.＜/p＞画面が切り替わりますので、しばらくお待ち下さい。 ※ご購入は、楽天kobo商品ページからお願いします。※切り替わらない場合は、こちらをクリックして下さい。 ※このページからは注文できません。	6,076円
Terahertz Technology Fundamentals and Applications【電子書籍】[ Ali Rostami ] 楽天Kobo電子書籍ストア	＜p＞The book presents information about Terahertz science, Terahertz photodetectors and Terahertz Lasers. A special emphasis is given to room temperature operation of long wavelength photodetectors based on novel quantum dots (Centered Defect Spherical Quantum Dots). Moreover, a complete analysis of systems based on Quantum Cascade structures to detect far infrared wavelengths is provided. Finally, the book presents Terahertz laser principles considering multi-color lasers in this range of wavelengths. Written as a background for graduate students in the Optics field.＜/p＞画面が切り替わりますので、しばらくお待ち下さい。 ※ご購入は、楽天kobo商品ページからお願いします。※切り替わらない場合は、こちらをクリックして下さい。 ※このページからは注文できません。	18,231円
Active Metamaterials Terahertz Modulators and Detectors【電子書籍】[ Saroj Rout ] 楽天Kobo電子書籍ストア	＜p＞This book covers the theoretical background, experimental methods and implementation details to engineer for communication and imaging application, terahertz devices using metamaterials, in mainstream semiconductor foundry processes. This book will provide engineers and physicists an authoritative reference to construct such devices with minimal background. The authors describe the design and construction of electromagnetic (EM) devices for terahertz frequencies (108-1010 cycles/sec) using artificial materials that are a fraction of the wavelength of the incident EM wave, resulting in an ＜em＞effective＜/em＞ electric and magnetic properties (＜em＞permittivity＜/em＞ and ＜em＞permeability＜/em＞) that are unavailable in natural materials.＜/p＞画面が切り替わりますので、しばらくお待ち下さい。 ※ご購入は、楽天kobo商品ページからお願いします。※切り替わらない場合は、こちらをクリックして下さい。 ※このページからは注文できません。	14,585円
Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications【電子書籍】楽天Kobo電子書籍ストア	＜p＞High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. ＜em＞＜strong＞Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications＜/strong＞＜/em＞ characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters.＜/p＞＜p＞Features:＜/p＞＜ul＞＜li＞＜/li＞＜li＞Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs.＜/li＞＜li＞＜/li＞＜li＞Covers novel indium arsenide architectures for achieving terahertz frequencies＜/li＞＜li＞＜/li＞＜li＞Discusses impact of device parameters on frequency response＜/li＞＜li＞＜/li＞＜li＞Illustrates noise characterization of optimized indium arsenide HEMTs＜/li＞＜li＞＜/li＞＜li＞Introduces terahertz electronics including sources for terahertz applications.＜/li＞＜/ul＞＜p＞This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.＜/p＞画面が切り替わりますので、しばらくお待ち下さい。 ※ご購入は、楽天kobo商品ページからお願いします。※切り替わらない場合は、こちらをクリックして下さい。 ※このページからは注文できません。	8,278円