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Epitaxial Growth of Complex Metal Oxides【電子書籍】

楽天Kobo電子書籍ストア
<p>E<em>pitaxial Growth of Complex Metal Oxides, Second Edition</em> reviews techniques and recent developments in the fabrication quality of complex metal oxides, which are facilitating advances in electronic, magnetic and optical applications. Sections review the key techniques involved in the epitaxial growth of complex metal oxides and explore the effects of strain and stoichiometry on crystal structure and related properties in thin film oxides. Finally, the book concludes by discussing selected examples of important applications of complex metal oxide thin films, including optoelectronics, batteries, spintronics and neuromorphic applications.</p> <p>This new edition has been fully updated, with brand new chapters on topics such as atomic layer deposition, interfaces, STEM-EELs, and the epitaxial growth of multiferroics, ferroelectrics and nanocomposites.</p> <ul> <li>Examines the techniques used in epitaxial thin film growth for complex oxides, including atomic layer deposition, sputtering techniques, molecular beam epitaxy, and chemical solution deposition techniques</li> <li>Reviews materials design strategies and materials property analysis methods, including the impacts of defects, strain, interfaces and stoichiometry</li> <li>Describes key applications of epitaxially grown metal oxides, including optoelectronics, batteries, spintronics and neuromorphic applications</li> </ul>画面が切り替わりますので、しばらくお待ち下さい。 ※ご購入は、楽天kobo商品ページからお願いします。※切り替わらない場合は、こちら をクリックして下さい。 ※このページからは注文できません。 31,142円

Epitaxial Graphene on Silicon Carbide Modeling, Characterization, and Applications【電子書籍】

楽天Kobo電子書籍ストア
<p>This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition.</p> <p>The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.</p>画面が切り替わりますので、しばらくお待ち下さい。 ※ご購入は、楽天kobo商品ページからお願いします。※切り替わらない場合は、こちら をクリックして下さい。 ※このページからは注文できません。 20,372円

Theoretical Modeling of Epitaxial Graphene Growth on the Ir(111) Surface【電子書籍】[ Holly Alexandra Tetlow ]

楽天Kobo電子書籍ストア
<p>One possible method of producing high-quality graphene is to grow it epitaxially; this thesis investigates the mechanisms involved in doing so. It describes how the initial stages of growth on the Ir(111) surface are modelled using both rate equations and kinetic Monte Carlo, based upon nudged elastic band (NEB) calculated reaction energy barriers. The results show that the decomposition mechanism involves production of C monomers by breaking the C-C bond.</p> <p>In turn, the thesis explores the nucleation of carbon clusters on the surface from C monomers prior to graphene formation. Small arch-shaped clusters containing four to six C atoms, which may be key in graphene formation, are predicted to be long-lived on the surface.</p> <p>In closing, the healing of single vacancy defects in the graphene/Ir(111) surface is investigated, and attempts to heal said defects using ethylene molecules is simulated with molecular dynamics and NEB calculated energy barriers.</p>画面が切り替わりますので、しばらくお待ち下さい。 ※ご購入は、楽天kobo商品ページからお願いします。※切り替わらない場合は、こちら をクリックして下さい。 ※このページからは注文できません。 6,076円

Crystal Structure,Electronic and Optical Properties of Epitaxial Alkaline Earth Niobate Thin Films【電子書籍】[ Dongyang Wan ]

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<p>This impressive thesis offers a comprehensive scientific study of the alkaline earth niobates and describes their nonlinear optical properties for the first time. It explores the crystal structure, electrical properties, optical absorption properties, hot carrier dynamics, nonlinear optical property and strain-induced metal to insulator transition of alkaline earth niobates using advanced experimental techniques. These alkaline earth niobates can have a strong plasmon resonance in the visible range due to their large carrier density, and this unique property gives rise to the emergent phenomenon of photocatalysis and nonlinear optical properties. This series of intrinsic plasmonic materials based on niobates, can be used as a photocatalyst to split water under sunlight, a novel saturable absorber in the high-power ultrashort pulsed laser system, and as a sensor in microelectromechanical systems.</p>画面が切り替わりますので、しばらくお待ち下さい。 ※ご購入は、楽天kobo商品ページからお願いします。※切り替わらない場合は、こちら をクリックして下さい。 ※このページからは注文できません。 12,154円

フェアチャイルド PNP Epitaxial Silicon Transistor 1個 MJE350STU

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商品名:フェアチャイルド PNP Epitaxial Silicon Transistor 1個 MJE350STU●極性:PNPVce[V]:-300VIc[A]:-500mAPc[W]:Ta=26℃:20WhFE:30 @ 50mA、10Vパッケージ:TO-126 56円

フェアチャイルド NPN Epitaxial Silicon Transistor 1個 MJE340STU

Shop de clinic楽天市場店
商品名:フェアチャイルド NPN Epitaxial Silicon Transistor 1個 MJE340STU●極性:NPNVce[V]:300VIc[A]:500mAPc[W]:Ta=26℃:20WhFE:30 @ 50mA、10Vパッケージ:TO-126 69円

Epitaxial Growth of III-Nitride Compounds Computational Approach【電子書籍】

楽天Kobo電子書籍ストア
<p>This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.</p>画面が切り替わりますので、しばらくお待ち下さい。 ※ご購入は、楽天kobo商品ページからお願いします。※切り替わらない場合は、こちら をクリックして下さい。 ※このページからは注文できません。 6,076円

Epitaxial Growth of Complex Metal Oxides【電子書籍】

楽天Kobo電子書籍ストア
<p>The atomic arrangement and subsequent properties of a material are determined by the type and conditions of growth leading to epitaxy, making control of these conditions key to the fabrication of higher quality materials. <em>Epitaxial Growth of Complex Metal Oxides</em> reviews the techniques involved in such processes and highlights recent developments in fabrication quality which are facilitating advances in applications for electronic, magnetic and optical purposes.</p> <p>Part One reviews the key techniques involved in the epitaxial growth of complex metal oxides, including growth studies using reflection high-energy electron diffraction, pulsed laser deposition, hybrid molecular beam epitaxy, sputtering processes and chemical solution deposition techniques for the growth of oxide thin films. Part Two goes on to explore the effects of strain and stoichiometry on crystal structure and related properties, in thin film oxides. Finally, the book concludes by discussing selected examples of important applications of complex metal oxide thin films in Part Three.</p> <ul> <li>Provides valuable information on the improvements in epitaxial growth processes that have resulted in higher quality films of complex metal oxides and further advances in applications for electronic and optical purposes</li> <li>Examines the techniques used in epitaxial thin film growth</li> <li>Describes the epitaxial growth and functional properties of complex metal oxides and explores the effects of strain and defects</li> </ul>画面が切り替わりますので、しばらくお待ち下さい。 ※ご購入は、楽天kobo商品ページからお願いします。※切り替わらない場合は、こちら をクリックして下さい。 ※このページからは注文できません。 31,142円

Observation of Superconductivity in Epitaxially Grown Atomic Layers In Situ Electrical Transport Measurements【電子書籍】[ Satoru Ichinokura ]

楽天Kobo電子書籍ストア
<p>This thesis presents first observations of superconductivity in one- or two-atomic-scale thin layer materials. The thesis begins with a historical overview of superconductivity and the electronic structure of two-dimensional materials, and mentions that these key ingredients lead to the possibility of the two-dimensional superconductor with high phase-transition temperature and critical magnetic field. Thereafter, the thesis moves its focus onto the implemented experiments, in which mainly two different materials thallium-deposited silicon surfaces and metal-intercalated bilayer graphenes, are used. The study of the first material is the first experimental demonstration of both a gigantic Rashba effect and superconductivity in the materials supposed to be superconductors without spatial inversion symmetry. The study of the latter material is relevant to superconductivity in a bilayer graphene, which was a big experimental challenge for a decade, and has been first achieved by the author.</p> <p>The description of the generic and innovative measurement technique, highly effective in probing electric resistivity of ultra-thin materials unstable in an ambient environment, makes this thesis a valuable source for researchers not only in surface physics but also in nano-materials science and other condensed-matter physics.</p>画面が切り替わりますので、しばらくお待ち下さい。 ※ご購入は、楽天kobo商品ページからお願いします。※切り替わらない場合は、こちら をクリックして下さい。 ※このページからは注文できません。 12,154円

Diamond Films Chemical Vapor Deposition for Oriented and Heteroepitaxial Growth【電子書籍】[ Koji Kobashi ]

楽天Kobo電子書籍ストア
<ul> <li>Discusses the most advanced techniques for diamond growth</li> <li>Assists diamond researchers in deciding on the most suitable process conditions</li> <li>Inspires readers to devise new CVD (chemical vapor deposition</li> </ul> <p>Ever since the early 1980s, and the discovery of the vapour growth methods of diamond film, heteroexpitaxial growth has become one of the most important and heavily discussed topics amongst the diamond research community. Kobashi has documented such discussions with a strong focus on how diamond films can be best utilised as an industrial material, working from the premise that crystal diamond films can be made by chemical vapour disposition. Kobashi provides information on the process and characterization technologies of oriented and heteroepitaxial growth of diamond films.</p>画面が切り替わりますので、しばらくお待ち下さい。 ※ご購入は、楽天kobo商品ページからお願いします。※切り替わらない場合は、こちら をクリックして下さい。 ※このページからは注文できません。 19,074円